Manufacturer:NXP
Product Category:Transistors RF MOSFET
RoHS: Details
Transistor Type:LDMOS Power
Id - Continuous Drain Current:2.8 uA
Vds - Drain-Source Breakdown Voltage:135 V
Rds On - Drain-Source Resistance:0.08 Ohms
Frequency:600 MHz
Technology:Si
Vgs - Gate-Source Breakdown Voltage:1.5 V
Gain:24.4 dB
Output Power:1400 W
Mounting Style:SMD/SMT
Package / Case:SOT-539B
Packaging:Tube
Brand:NXP Semiconductors
Product Type:RF Power Transistor
Factory Pack Quantity:60   1box is 20pcs.
Type:LDMOS
Vgs th - Gate-Source Threshold Voltage:1.9 V